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Archive Physics - Number 1 , Volume 2 (2014)

Article Name Language
A STUDY OF ELECTRONIC AND SPATIAL STRUCTURES OF MOLECULAR- AND NANO-SYSTEMS CONSISTING HYDROGEN AND SECOND PERIOD ELEMENTS THROUGH THEORETICAL METHODS I. COMPOUNDS COMPOSED OF FEW ATOMS AND PEPTIDES AZ
Naqif Nəbiyev
COMPARATIVE CONFORMATIONAL ANALYSIS OF BACTENECINE 5 MOLECULE ANALOGS PHE-ARG-PRO-XAA, (XAA=TRP, PHE, TYR, MET) AZ
N.M QOCAYEV, X.Ə KƏRIMOVA, G.Ə. AĞAYEVA
INVESTIGATION OF THE VISCOSITY OF THERMAL WATERSOF THE GAKH AND GABALA REGIONS OF AZERBAIJAN AZ
Mahir BƏŞİROV, Cavid SƏFƏROV, Anar ƏHMƏDOV, Eqon HASSEL
INFLUENCE OF NEUTRON IRRADIATION ON THE FREQUENCY DEPENDENCE OF DIELECTRIC PROPERTIES OF NANO SiO2 AZ
Elçin HÜSEYNOV, Adil QƏRİBOV, Rəvan MEHDİYEVA
THE AHARONOV-BOHM EFFECT IN LINEAR HARMONIC OSCILLATOR AZ
M. R RAJABOV
PHASE STRUCTURE OF STRONGLY INTERACTING MATTER EN
Anar RUSTAMOV
SIMULATION OF THE OPTICAL PROPERTIES OF METAL NANOPARTICLES AND THEIR INFLUENCE ON Mg2Si SOLAR CELLS EN
Hamed REZAZADEH, Majid EBRAHIMZADEH
PROPERTIES OF THE ELECTRONIC STRUCTURE OF THE LANTHANIDES RU
Э.М ГОДЖАЕВ, А.М ПАШАЕВ, С.Х АГАЕВА
DESIGN OF DIPEPTIDE MIMETIC OF 4 LOOP BRAIN-DERIVED NEUROTROPHIC FACTOR AND STUDY OF STRUCTURE-ACTIVITY RELATIONSHIP IN ITS ANALOGUES SERIES RU
А.В ТАРАСЮК, И.О ЛОГВИНОВ, П.Ю ПОВАРНИНА, Т.А АНТИПОВА, Т.А ГУДАШЕВА
ON A MECHANISM OF FORMATION OF THE VAN-DER WAALS SURFACE OF THE LAYERED GASE AND GASEIMPURITY -TYPE CRYSTALS RU
Б.Г. ТАГИЕВ, А.М ПАШАЕВ, А.А САФАРЗАДЕ, Р.Ф МЕХТИЕВ
MORPHOLOGY FEATURES OF SELF-ORGANIZED NATURAL SURFACE STRUCTURES RU
Э.М ГОДЖАЕВ, А.Ш КАХРАМАНОВ, К.Ш. КАХРАМАНОВ, Ш.В АЛИЕВА
THE IMPEDANCE SPECTROSCOPY OF A NEON DISCHARGE UNDER STEPWISE IONIZATION AND VOLIUME RECOMBINATION RU
А.Х МУРАДОВ, Р.А АБДУЛЛАЕВ, Т.Х ГУСЕЙНОВ
A STUDY OF THERMODYNAMIC PARAMETERS OF InGaSe2 COMPOUND RU
П.Ф АЛИЕВА
APPLICATION OF THE EFFECTIVE HAMILTONIAN METHOD FOR CALCULATIONS IN ENERGETIC REPRESENTATION RU
Р.Г АГАЕВА
THE QUASIELASTIC PROCESSES WITH EJECTION OF A NUKLEON ASSOCIATIONS IN EXCITED STATES RU
С.Г. АБДУЛВАГАБОВА
TlBiS2 (Bi2Te2S)-TlBiTe2 SYSTEMS RU
Я.И ДЖАФАРОВ
THE INVESTIGATION OF BASIC ELECTRICAL PARAMETERS OF SCHOTTKY DIODES FABRICATED ON GaAs SEMICONDUCTOR BY USING CAPACITANCE-VOLTAGE (C-V) MEASUREMENT METHOD TR
Ahmet ASİMOV, Elchin HUSEYNOV


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